Electronic structure of Ni2MnIn for use in spin injection
Identifieur interne : 012058 ( Main/Repository ); précédent : 012057; suivant : 012059Electronic structure of Ni2MnIn for use in spin injection
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Abstract
Data and Das [S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990)] proposed an electronic analog to the optoelectronic modulator which would employ spin injection from a ferromagnet into a semiconductor. We investigate the ferromagnet-semiconductor system consisting of the Heusler alloy Ni2MnIn and the semiconductor InAs. Using a full-potential electronic structure code with a basis set of Slater-type orbitals, we have calculated the band structure of Ni2MnIn. We calculate the spin polarization for each atom. It resides primarily on the Mn atom (3.51), with a small moment (0.31) on the Ni. Interestingly, In has a very small moment (-0.04), which is antiferromagnetically coupled to the other atoms. Using a simple model, we estimate the transmittance of minority spins in three high-symmetry directions. © 2000 American Institute of Physics.
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Victora</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0181380</idno><date when="2000-05-01">2000-05-01</date><idno type="stanalyst">PASCAL 00-0181380 AIP</idno><idno type="RBID">Pascal:00-0181380</idno><idno type="wicri:Area/Main/Corpus">013607</idno><idno type="wicri:Area/Main/Repository">012058</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band structure</term><term>Electron spin polarization</term><term>Ferromagnetic materials</term><term>III-V semiconductors</term><term>Indium alloys</term><term>Indium compounds</term><term>Magnetic moments</term><term>Manganese alloys</term><term>Nickel alloys</term><term>STO calculations</term><term>Semiconductor-metal boundaries</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7120B</term><term>7550C</term><term>7340N</term><term>7115F</term><term>7530C</term><term>Etude théorique</term><term>Nickel alliage</term><term>Manganèse alliage</term><term>Indium alliage</term><term>Structure bande</term><term>Matériau ferromagnétique</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Interface métal semiconducteur</term><term>Calcul STO</term><term>Polarisation spin électronique</term><term>Moment magnétique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Data and Das [S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990)] proposed an electronic analog to the optoelectronic modulator which would employ spin injection from a ferromagnet into a semiconductor. We investigate the ferromagnet-semiconductor system consisting of the Heusler alloy Ni<sub>2</sub>MnIn and the semiconductor InAs. Using a full-potential electronic structure code with a basis set of Slater-type orbitals, we have calculated the band structure of Ni<sub>2</sub>MnIn. We calculate the spin polarization for each atom. It resides primarily on the Mn atom (3.51), with a small moment (0.31) on the Ni. Interestingly, In has a very small moment (-0.04), which is antiferromagnetically coupled to the other atoms. Using a simple model, we estimate the transmittance of minority spins in three high-symmetry directions. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>87</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electronic structure of Ni<sub>2</sub>MnIn for use in spin injection</s1></fA08><fA11 i1="01" i2="1"><s1>KILIAN (K. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>VICTORA (R. H.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>7064-7066</s1></fA20><fA21><s1>2000-05-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. 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